Introduction to Space Charge Effects in Semiconductors [electronic resource] / by Karl W. Bȵer.

Por: Bȵer, Karl W [author.]Tipo de material: TextoTextoSeries Springer Series in Solid-State Sciences, 160Editor: Berlin, Heidelberg : Springer Berlin Heidelberg, 2010Descripción: XIII, 331 p. 168 illus. online resourceTipo de contenido: text Tipo de medio: computer Tipo de portador: online resourceISBN: 9783642022364Trabajos contenidos: SpringerLink (Online service)Tema(s): Physics | Computer engineering | Optical materials | Nanotechnology | Physics | Solid State Physics | Spectroscopy and Microscopy | Optical and Electronic Materials | Electrical Engineering | NanotechnologyFormatos físicos adicionales: Sin títuloClasificación CDD: 530.41 Clasificación LoC: Libro electrónicoRecursos en línea: de clik aquí para ver el libro electrónico
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Springer eBooksResumen: This book is the most comprehensive one to describe the basics of space-charge effects in semiconductors, starting from basic principles to advanced application in semiconducting devices. It uses detailed analyses of the transport, Poisson, and continuity equations to demonstrate the behavior of the solution curves of the complete set of field and current distributions, along with quantitative descriptions of the relevant band models of typical pn-junction and Schottky barrier devices. It emphasizes the relevance to actual devices and sets these results apart from more simple models of networks of diodes and resistors. The book is especially important for people interested in detail analysis of solar cells and their efficiencies.
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Space Charges in Insulators -- Creation of Space-Charge Regions in Solids -- The Schottky Barrier -- Minority Carriers in Barriers -- Minority Carrier Currents -- Schottky Barrier in Two-Carrier Model -- pn-Homojunctions -- The Photovoltaic Effect -- The Schottky Barrier Photodiode -- The pn-Junction with Light -- The Heterojunction with Light.

This book is the most comprehensive one to describe the basics of space-charge effects in semiconductors, starting from basic principles to advanced application in semiconducting devices. It uses detailed analyses of the transport, Poisson, and continuity equations to demonstrate the behavior of the solution curves of the complete set of field and current distributions, along with quantitative descriptions of the relevant band models of typical pn-junction and Schottky barrier devices. It emphasizes the relevance to actual devices and sets these results apart from more simple models of networks of diodes and resistors. The book is especially important for people interested in detail analysis of solar cells and their efficiencies.

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